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BGA 420
Si-MMIC-Amplifier in SIEGET(R) 25-Technologie
Preliminary data * Cascadable 50 -gain block * Unconditionally stable * Gain |S21 |2 = 13 dB at 1.8 GHz
3 4
IP3out = +9 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.4 mA) * Noise figure NF = 2.2 dB at 1.8 GHz * Reverse isolation > 28 dB and return loss IN / OUT > 12 dB at 1.8 GHz
4 3 OUT
2 1
VD
VPS05605
Circuit Diagram
IN 1 2 GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BGA 420
Parameter
Marking Ordering Code BLs Q62702-G0057
Pin Configuration 1, IN 2, GND
Symbol
Package 3, OUT 4, VD
Value 15 6 90 0 150 -65 ...+150 -65 ...+150
SOT-343
Unit mA V mW dBm C
Maximum Ratings Device current Device voltage Total power dissipation, TS tbd C
ID VD Ptot PRFin Tj TA T stg
1)
RF input power
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point
RthJS
tbd
K/W
1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Jul-13-1998 1998-11-01
BGA 420
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz
Typical biasing configuration
Unit max. 8 mA dB
typ. 6.7 19 17 13 28
ID
|S21| 2
5.4 17 15 11 25
S12
NF
7.5 -2.5 8 12 1.9 2 2.2 9 -1 11 16 2.2 2.3 2.5 dB
IP 3out P-1dB RL in RL out
dBm
+VD 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 1 100 pF RF IN GND
EHA07386
2
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path! 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! Semiconductor Group Semiconductor Group 22
Jul-13-1998 1998-11-01
BGA 420
Typical S-Parameters at TA = 25 C
f
GHz
S11
MAG ANG MAG
S21
ANG MAG
S12
ANG MAG
S22
ANG
VD = 3 V, Z o = 50 0.5686 -8.5 0.1 0.5066 -19.2 0.5 0.4404 -28.7 0.8 0.3904 -34.6 1 0.2841 -50.5 1.5 0.2343 -60.6 1.8 0.2136 -64.1 1.9 0.2062 -68.4 2 0.1688 -89.7 2.4 0.1558 -104.9 3
9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861
170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3
0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682
12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1
0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284
-8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5
Spice-model BGA 420
BGA 420-chip including parasitics +V 14
T1
T501 14.5k 140 2.4k 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF
R1 R2
13 OUT
R2
R3 C1 CP1 CP2 CP3 CP4
R1
R3
IN
11
C1
T1
C P3
C P4
C P1
C P2
12 GND
EHA07387
Semiconductor Group Semiconductor Group
33
Jul-13-1998 1998-11-01
BGA 420
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =
0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3
aA V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469
A A V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300
fA fA mA V fF V eV K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
-
RS =
20
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L2
+V
C1 C2 L BO
IN
C CB
L1
14
C3
L BI
11
BGA 420 Chip 12
13
L CI
L CO
OUT
C BE L EI
C'-E'Diode
C CE
L EO
GND
EHA07388
LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 =
0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4
nH nH nH nH nH nH fF fF fF fF fF fF nH nH
Valid up to 3GHz Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) (c) 1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group Semiconductor Group 44
Jul-13-1998 1998-11-01
BGA 420
Insertion power gain |S 21| 2 = f (f)
Insertion power gain |S21| 2 = f (f)
VD = 3 V VD, I D = parameter
25
TA = parameter
22
dB
VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3,4mA
dB
18 16
TA=-20C TA=+25C TA=+75C
|S 21|2
|S 21|2
0 1
15
14 12 10
10 8 6 5 4 2 0 -1 10 10
GHz
10
0 -1 10
10
0
GHz
10
1
f
f
Noise figure NF = f (f)
Noise figure NF = f (f)
VD = 3V VD,ID = parameter
5
TA = parameter
3.5
dB dB
VD=5V, ID=12.4mA VD=3V, ID=6.4mA
TA=+75C TA=+25C TA=-20C
2.5
NF
3
NF
2.0 1.5 1.0 0.5
0 1
2
1
0 -1 10
10
GHz
10
0.0 -1 10
10
0
GHz
10
1
f
f
Semiconductor Group Semiconductor Group
55
Jul-13-1998 1998-11-01
BGA 420
Intercept point at the output
Intercept point at the output
IP 3out = f (f) VD,ID = parameter
20
dBm
IP3out = f (f), VD = 3V TA = parameter
12
16
VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA
dBm
10 9
IP 3out
IP 3out
14 12 10 8 6 4
8 7 6 5 4 3 2
TA=-20C TA=+25C TA=75C
2 0 -1 10
0 1
1 10
GHz
10
0 -1 10
10
0
GHz
10
1
f
f
Semiconductor Group Semiconductor Group
66
Jul-13-1998 1998-11-01

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